G8509.B01 with NSN 5962-01-240-6660 by Bae Systems Information And Electronic Systems Integration Inc - Request an Instant Quote
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Part Number: G8509.B01
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Alternate P/N : G8509B01
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Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
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NSN: 5962-01-240-6660 (5962012406660)
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NIIN: 012406660
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Item Name : Microcircuit Memory
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CAGE Code: 94117
Your required NSN Part G8509.B01 Under Microcircuit Memory with FSC 5962 Microcircuits Electronic manufactured by Bae Systems Information And Electronic Systems Integration Inc having CAGE Code 94117 is now in stock and available for immediate dispatch! The NSN for this particular part is 5962012406660. If you are interested in obtaining the best quote for NSN Part G8509.B01, you can easily do so by filling out the form.
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NSN Information for Part Number G8509.B01 with NSN 5962-01-240-6660, 5962012406660
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-240-6660 Item Description: Microcircuit Memory | 5962 | 012406660 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
G8509.B01 | 2 | 1 | 5 |
Characteristics Data of NSN 5962-01-240-6660, 5962012406660
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 760 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 270 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 150 INCHES NOMINAL |
MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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