9966-CDFB with NSN 5962-01-331-7924 by Bae Systems Operations Limited Dba Bae Systems Plc - Request an Instant Quote
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Part Number: 9966-CDFB
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Alternate P/N : 9966CDFB
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Manufacturer: Bae Systems Operations Limited Dba Bae Systems Plc
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NSN: 5962-01-331-7924 (5962013317924)
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NIIN: 013317924
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Item Name : Microcircuit Memory
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CAGE Code: K0656
Your required NSN Part 9966-CDFB Under Microcircuit Memory with FSC 5962 Microcircuits Electronic manufactured by Bae Systems Operations Limited Dba Bae Systems Plc having CAGE Code K0656 is now in stock and available for immediate dispatch! The NSN for this particular part is 5962013317924. If you are interested in obtaining the best quote for NSN Part 9966-CDFB, you can easily do so by filling out the form.
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NSN Information for Part Number 9966-CDFB with NSN 5962-01-331-7924, 5962013317924
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-331-7924 Item Description: Microcircuit Memory | 5962 | 013317924 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
9966-Cdfb | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-331-7924, 5962013317924
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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